High-response n-butanol gas sensor based on ZnO/In2O3 heterostructure

In this study, ZnO/In2O3-heterostructured nanosheets were prepared using a one-step hydrothermal method. The effects of ZnO content on the gas-sensing performance were discussed, with ZnO/In2O3-2 exhibiting the highest performance among the prepared sensors. The response of ZnO/In2O3-2 to n-butanol was 302 at 26 degrees C, which was 11.93 times higher than that of pure In2O3. Among the eight tested gases, ZnO/In2O3-2 displayed the highest response to n-butanol. Moreover, the lower detection limit of the ZnO/In2O3 nanosheets was reduced from 10 x 10(-6) to 0.1 x 10(-6) (for pure In2O3 nanosheets) toward n-butanol. This is because the doping of Zn2+ increases the number of oxygen vacancies on the sensor surface and allows the formation of an n-n heterostructure between ZnO and In2O3, which increases the initial resistance of the sensor.

Automated summary

ZnO/In2O3-heterostructured nanosheets were prepared using a hydrothermal method, and the gas-sensing performance was studied. The results showed that ZnO/In2O3-2 exhibited the highest response to n-butanol, with a higher response temperature compared to pure In2O3. The doping of Zn2+ increased the number of oxygen vacancies and allowed the formation of an n-n heterostructure between ZnO and In2O3, thereby increasing the initial resistance of the sensor.