期刊
JOURNAL OF LUMINESCENCE
卷 174, 期 -, 页码 6-10出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2016.01.031
关键词
Pure UV emitter; ZnO crystals; Carbon doping; High-energy ball milling; Photoluminescence quenching
类别
资金
- National Application-Oriented Basic Research Program [DTDL.05-2011-NCCB]
We report on C-doped ZnO, with different weight percentages of dopant, prepared by a high-energy ball milling method. The annealing conditions with temperature of 800 degrees C and in argon environment appear to be the optimal conditions for producing good quality crystals as well as pure UV emission. XRD and FTIR analysis indicate the substitution of C for Zn. In addition, Raman spectroscopy suggests a disordered graphitic layer covering the crystals. Photoluminescence investigation reveals the continuous quenching of visible region upon increasing C concentration and the intensity ratio between defect-related and UV emission can be as negligible as 0.02. The passivation of surface defects and the creation of a non radiative recombination pathway by carbon integration are proposed as possible origins of the suppression. (C) 2016 Elsevier B.V. All rights reserved.
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