期刊
JOURNAL OF LUMINESCENCE
卷 178, 期 -, 页码 267-281出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2016.05.055
关键词
Aluminum nitride; Luminescence; Defects; Electronic structure; Excitons; Recombination processes
类别
This review gives the reader an overview of the published results describing near band-edge as well as defect related luminescence in aluminum nitride, also presenting findings from theoretical reports investigating band-structure, intrinsic defects or foreign impurities. Especially in the case of defect related luminescences, the different points of view in the literature are outlined and compared to each other. To facilitate future reference for respective energy transfers, the various assignments to specific emission peaks are presented in neatly arranged tables. Additionally, involved theoretical simulations are summarized in a condensed manner to give a simple view to key features investigated in the particular reports, respectively. (C) 2016 Elsevier B.V. All rights reserved.
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