4.8 Article

Flexoelectricity-Driven Mechanical Switching of Polarization in Metastable Ferroelectrics

期刊

PHYSICAL REVIEW LETTERS
卷 129, 期 11, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.129.117601

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资金

  1. Research Center Program of the Institute for Basic Science (IBS) in Korea [IBS-R009-D1]
  2. National Research Foundation of Korea (NRF) - Korea government (MSIT) [2021R1C1C1009494, 2019R1C1C1002558, 2021R1A5A1032996]
  3. Samsung Electronics Co., Ltd. [IO201211-08061-01]
  4. Basic Science Research Institute Fund
  5. NRF [2021R1A6A1A10042944]
  6. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2021R1A6A1A03043957]
  7. National Research Foundation of Korea [2021R1A6A1A10042944, 2019R1C1C1002558, 2021R1C1C1009494] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This research reveals a method of mechanical polarization switching utilizing metastable ferroelectricity, and confirms that mechanical forces can significantly reduce the coercivity of metastable ferroelectricity, enabling efficient polarization switching. Furthermore, using low mechanical forces allows for higher density data storage.
Flexoelectricity-based mechanical switching of ferroelectric polarization has recently emerged as a fascinating alternative to conventional polarization switching using electric fields. Here, we demonstrate hyperefficient mechanical switching of polarization exploiting metastable ferroelectricity that inherently holds a unique mechanical response. We theoretically predict that mechanical forces markedly reduce the coercivity of metastable ferroelectricity, thus greatly bolstering flexoelectricity-driven mechanical polarization switching. As predicted, we experimentally confirm the mechanical polarization switching via an unusually low mechanical force (100 nN) in metastable ferroelectric CaTiO3. Furthermore, the use of low mechanical forces narrows the width of mechanically writable nanodomains to sub-10 nm, suggesting an ultrahigh data storage density of & GE;1 Tbit cm-2. This Letter sheds light on the mechanical switching of ferroelectric polarization as a viable key element for next-generation efficient nanoelectronics and nanoelectromechanics.

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