Zeeman Effect in Centrosymmetric Antiferromagnetic Semiconductors Controlled by an Electric Field

Centrosymmetric antiferromagnetic semiconductors, although abundant in nature, seem less promising than ferromagnets and ferroelectrics for practical applications in semiconductor spintronics. As a matter of fact, the lack of spontaneous polarization and magnetization hinders the efficient utilization of electronic spin in these materials. Here, we propose a paradigm to harness electronic spin in centrosymmetric antiferromagnets via Zeeman spin splitting of electronic energy levels-termed as the spin Zeeman effect-which is controlled by an electric field. By symmetry analysis, we identify 21 centrosymmetric magnetic point groups that accommodate such a spin Zeeman effect. We further predict by first principles that two antiferromagnetic semiconductors, Fe2TeO6 and SrFe2S2O, are excellent candidates showcasing Zeeman splittings as large as-55 and-30 meV, respectively, induced by an electric field of 6 MV/cm. Moreover, the electronic spin magnetization associated to the splitting energy levels can be switched by reversing the electric field. Our Letter thus sheds light on the electric-field control of electronic spin in antiferromagnets, which broadens the scope of application of centrosymmetric antiferromagnetic semiconductors.

Automated summary

This study proposes a new paradigm for harnessing electronic spin in centrosymmetric antiferromagnets by controlling it with an electric field through the Zeeman spin splitting effect. By symmetry analysis, 21 centrosymmetric magnetic point groups that accommodate such an effect were identified, and two materials were predicted to be excellent candidates. The electronic spin magnetization associated with the splitting energy levels can be switched by reversing the electric field.