Impact of Surface Charge Depletion on the Free Electron Nonlinear Response of Heavily Doped Semiconductors

We propose surface modulation of the equilibrium charge density as a technique to control and enhance, via an external static potential, the free electron nonlinear response of heavily doped semiconductors. Within a hydrodynamic perturbative approach, we predict a 2 order of magnitude boost of free electron third-harmonic generation.

Automated summary

This study proposes surface modulation of the equilibrium charge density as a technique to control and enhance the free electron nonlinear response in heavily doped semiconductors using an external static potential. Within a hydrodynamic perturbative approach, a two-order of magnitude boost in free electron third-harmonic generation is predicted.