相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes
Jose P. S. Cardoso et al.
ACS APPLIED NANO MATERIALS (2022)
Formation of voids and their role in the recovery of sputtered AlN during high-temperature annealing
L. Cancellara et al.
JOURNAL OF APPLIED PHYSICS (2022)
Optical property in colorless AlN bulk crystals: investigation of native defect-induced UV absorption
Lei Jin et al.
SCRIPTA MATERIALIA (2021)
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
Ronny Kirste et al.
JOURNAL OF MATERIALS RESEARCH (2021)
Review-Status and Challenges in Hetero-epitaxial Growth Approach for Large Diameter AlN Single Crystalline Substrates
Rajappan Radhakrishnan Sumathi
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2021)
Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
L. Y. Li et al.
APPLIED PHYSICS LETTERS (2021)
Ultrawide-bandgap semiconductor AlN crystals: growth and applications
Ruixian Yu et al.
JOURNAL OF MATERIALS CHEMISTRY C (2021)
The 2020 UV emitter roadmap
Hiroshi Amano et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
Point Defect-Induced UV-C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal-Organic Chemical Vapor Deposition
Nadine Tillner et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2020)
Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center
Qin Zhou et al.
APL MATERIALS (2020)
Favourable growth conditions for the preparation of bulk AlN single crystals by PVT
C. Hartmann et al.
CRYSTENGCOMM (2020)
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Michael Kneissl et al.
NATURE PHOTONICS (2019)
Characterization of 60 mm AlN Single Crystal Wafers Grown by the Physical Vapor Transport Method
Qikun Wang et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2019)
Carbon pair defects in aluminum nitride
I. Gamov et al.
JOURNAL OF APPLIED PHYSICS (2019)
Ab initio molecular dynamics simulations of AlN responding to low energy particle radiation
Jianqi Xi et al.
JOURNAL OF APPLIED PHYSICS (2018)
Point-Defect Nature of the Ultraviolet Absorption Band in AIN
D. Alden et al.
PHYSICAL REVIEW APPLIED (2018)
Physical property changes of neutron-irradiated aluminum nitride and their recovery behavior by annealing using a step-heating dilatometer
Thanataon Pornphatdetaudom et al.
NUCLEAR MATERIALS AND ENERGY (2018)
Employing Theories Far beyond Their Limits-The Case of the (Boguer-) Beer-Lambert Law
Thomas G. Mayerhoefer et al.
CHEMPHYSCHEM (2016)
Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle
Hiroyuki Fukuyama et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
Hideto Miyake et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Origins of optical absorption and emission lines in AlN
Qimin Yan et al.
APPLIED PHYSICS LETTERS (2014)
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
Benjamin E. Gaddy et al.
APPLIED PHYSICS LETTERS (2014)
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
J. L. Lyons et al.
PHYSICAL REVIEW B (2014)
Bulk AlN growth by physical vapour transport
C. Hartmann et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2014)
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
Benjamin E. Gaddy et al.
APPLIED PHYSICS LETTERS (2013)
Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride
K. Irmscher et al.
JOURNAL OF APPLIED PHYSICS (2013)
On the origin of the 265 nm absorption band in AlN bulk crystals
Ramon Collazo et al.
APPLIED PHYSICS LETTERS (2012)
Faceting in AlN bulk crystal growth and its impact on optical properties of the crystals
Matthias Bickermann et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 (2012)
Identification of the VAl-ON defect complex in AlN single crystals
J-M Maki et al.
PHYSICAL REVIEW B (2011)
Disordering and dopant behaviour in Au+-ion- irradiated AlN
W. Jiang et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2007)
Ar implantation of InSb and AlN at 15 K
E Wendler et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2006)
Face-to-face annealing of Bi2Sr2CaCu2Ox thin films for intrinsic Josephson junctions with uniform critical currents
H Fujino et al.
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS (2005)
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
SR Lee et al.
APPLIED PHYSICS LETTERS (2005)
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
DD Koleske et al.
JOURNAL OF CRYSTAL GROWTH (2002)
分享论文
