期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 219, 期 23, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202200362
关键词
chemical vapor deposition; electron field emission; nanocrystalline diamonds; plasma
资金
- National Natural Science Foundation of China [U1809210, 52102052, 50972129, 50602039, 11504325]
- Natural Science Foundation of Zhejiang Province [LQ15A040004]
- One Belt and One Road International Cooperation Project from Key Research and Development Program of Zhejiang Province [2018C04021]
- National Key Research and Development Program of China [2016YFE0133200]
- International Science Technology Cooperation Program of China [2014DFR51160]
The PPT process has different effects on the structure evolution and EFE properties of HF-UNCD films and MP-UNCD films. In HF-UNCD films, CH4/N-2 PPT process can lead to the enlargement of diamond grains and the generation of stacking faults, resulting in a lower turn-on field. However, in MP-UNCD films, only isotropic growth occurs.
Plasma post-treatment (PPT) process is an effective way to improve the electron field-emission (EFE) properties of microwave plasma chemical vapor deposited ultrananocrystalline diamond (MP-UNCD) films, while its effects on hot-filament chemical vapor deposited UNCD (HF-UNCD) films were not confirmed. Due to monodispersed Ta atoms existing in HF-UNCD films, PPT process shows different effects on the structure evolution and EFE properties of HF-UNCD films and MP-UNCD films. CH4/N-2 PPT process make diamond grains change from small spherical particles to large plate-like aggregates with lots of stacking faults in HF-UNCD films. This is ascribed to both the CN species in CH4/N-2 plasma, which induces anisotropic growth of diamond and the monodispersed Ta atoms resulted in transition of graphite to diamond, which connect the neighboring nanosized diamond grains to a larger one and produce lots of stacking faults. The charges are easier to accumulate and emitted in the edges of the plate-like diamond and stacking faults have lower negative electron affinity. These lower the turn-on field from 26.3 to 12.7 V mu m(-1). It is different from that of MP-UNCD films, in which only anisotropic growth occurs and forms needle-like diamond due to CN species.
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