Effect of Erbium Oxide on Luminescence and Spectroscopy Properties of a Zinc Barium Boro-Tellurite Glass System for Photonic Applications

This research investigates the luminescence and spectroscopy properties of boro-tellurite glass doped with Er3+ ions. The series of glass is (30-x)TeO2-30B(2)O(3)-10ZnO-30BaO-xEr(2)O(3) where x = 0.00, 0.05, 0.10, 0.50, 1.00, and 1.50 mol%. The glass is synthesized by melt-quenching technique. The physical properties such as density and molar volume are evaluated. The concentration quenching effect is observed at 1.00 mol% of Er2O3 concentration. The molar volume and density of the present glasses show an opposite trend with increasing Er2O3 concentration suggesting more structural degradation due to non-bridging oxygen. The strongest intensity of absorption spectra occurs at 525 nm. The emission spectra shows an emission peak at 1.54 mu m of I-4(13/2) -> I-4(15/2) transition when monitored at 525 nm. Judd-Ofelt (J-O) analysis is employed to calculate the oscillator strength, stimulated emission cross-section, branching ratios, and a radiative lifetime of the prepared glass samples. McCumber theory is employed to understand the gain coefficients of the glasses. The data obtained reveal that these glasses doped Er3+ ion suits to be a potential candidate for C-band optical communication devices.

Automated summary

This research explores the luminescence and spectroscopy properties of borotellurite glass doped with Er3+ ions. The study reveals concentration quenching effect at 1.00 mol% of Er2O3 concentration, and a reverse trend between molar volume and density with increasing Er2O3 concentration, suggesting structural degradation due to non-bridging oxygen. The absorption spectra exhibit the strongest intensity at 525 nm, while the emission spectra show a peak at 1.54 μm of I-4(13/2) -> I-4(15/2) transition when monitored at 525 nm. Judd-Ofelt (J-O) analysis and McCumber theory are employed to calculate various parameters, indicating that these glasses doped with Er3+ ions have the potential to be used in C-band optical communication devices.