相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer
Jie-Long Liu et al.
APPLIED PHYSICS LETTERS (2022)
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
Ding-Yuan Chen et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2022)
High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a Buffer-Free Heterostructure
Bjorn Hult et al.
IEEE ELECTRON DEVICE LETTERS (2022)
Suitability of thin-GaN for AlGaN/GaN HEMT material and device
Kapil Narang et al.
JOURNAL OF MATERIALS SCIENCE (2022)
On the performance of GaN-on-Silicon, Silicon-Carbide, and Diamond substrates
Anwar Jarndal et al.
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING (2020)
Research on epitaxial of 250 nm high quality GaN HEMT based on AlN surface leveling technology
Dongguo Zhang et al.
APPLIED SURFACE SCIENCE (2020)
High-speed graded-channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz
J. S. Moon et al.
ELECTRONICS LETTERS (2020)
Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects
Johan Bremer et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors
Ding-Yuan Chen et al.
IEEE ELECTRON DEVICE LETTERS (2020)
A polarization-induced 2D hole gas in undoped gallium nitride quantum wells
Reet Chaudhuri et al.
SCIENCE (2019)
Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
Jun Lu et al.
APPLIED PHYSICS LETTERS (2019)
Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier
Anna Malmros et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers
Johan Bergsten et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
A GaN-SiC hybrid material for high-frequency and power electronics
Jr-Tai Chen et al.
APPLIED PHYSICS LETTERS (2018)
A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs
Yen-Ku Lin et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
GaN-on-Si Power Technology: Devices and Applications
Kevin J. Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs
Zhang Wen et al.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2017)
Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results
X. Li et al.
APPLIED PHYSICS LETTERS (2015)
Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer
Sebastian Gustafsson et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures
J. Bergsten et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2015)
High Johnson's figure of merit (8.32 THz.V) in 0.15-μm conventional T-gate AlGaN/GaN HEMTs on silicon
Kumud Ranjan et al.
APPLIED PHYSICS EXPRESS (2014)
Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation
Anna Malmros et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 (2014)
High-Speed, Enhancement-Mode GaN Power Switch With Regrown n plus GaN Ohmic Contacts and Staircase Field Plates
David F. Brown et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 °C) Electronics
Patrick Herfurth et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
Keisuke Shinohara et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors
Farid Medjdoub et al.
APPLIED PHYSICS EXPRESS (2011)
InAlN/GaN HEMTs With AlGaN Back Barriers
Dong Seup Lee et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Active Harmonic Load-Pull With Realistic Wideband Communications Signals
Mauro Marchetti et al.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2008)
The effect of an Fe-doped GaN buffer on OFF-State breakdown characteristics in AlGaN/GaN HEMTs on Si substrate
Young Chul Choi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
AlGaN/GaN high electron mobility transistors with InGaN back-barriers
T Palacios et al.
IEEE ELECTRON DEVICE LETTERS (2006)
Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT
MA Mastro et al.
MICROELECTRONICS JOURNAL (2005)
30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs
T Inoue et al.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2005)
Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H-SiC
ME Zvanut et al.
JOURNAL OF APPLIED PHYSICS (2004)
High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method
JR Jenny et al.
JOURNAL OF ELECTRONIC MATERIALS (2002)
Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors
N Maeda et al.
APPLIED PHYSICS LETTERS (2000)
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1-xN
G Parish et al.
JOURNAL OF ELECTRONIC MATERIALS (2000)
分享论文
