Lattice Boltzmann method with effective correction of phonon properties for nano/microscale heat transfer

The significant self-heating effect severely restricts the performance and reliability of nano-electronic devices. Accordingly, it is very important to understand the process and mechanism of nano/microscale heat transfer for thermal management and thermal design of devices. In this work, we propose a new Lattice Boltzmann Method (LBM) scheme with effective correction of phonon mean free path (MFP) and relaxation time to study phonon heat transfer in silicon thin films and silicon medium with defects, where the correction factor is dependent on the lattice structure of LBM. The transformation analysis of phonon transfer mechanism at different scales shows that the size effect of cross-plane thermal conductivity is more remarkable than that of in-plane thermal conductivity. And the thermal conductivity of silicon medium with defects decreases exponentially as defect density increases. The proposed new LBM scheme can generate more accurate results than the traditional ones in the heat conduction simulations of different nano/microscale structures.

Automated summary

The significant self-heating effect severely affects the performance and reliability of nano-electronic devices. Therefore, understanding the process and mechanism of nano/microscale heat transfer is crucial for thermal management and design. A new Lattice Boltzmann Method (LBM) scheme with effective correction of phonon mean free path and relaxation time is proposed to study phonon heat transfer in silicon thin films and medium with defects. The proposed scheme generates more accurate results in heat conduction simulations of different nano/microscale structures.