期刊
PHYSICA SCRIPTA
卷 97, 期 11, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1402-4896/ac9866
关键词
gallium nitride; x-ray diffraction (XRD); TEM; AFM; FESEM; pulse laser ablation in liquid
The pulsed laser ablation in liquid approach was used to synthesize gallium nitride nanoparticles with different energy levels, and the structural and optical characteristics were analyzed using XRD pattern and photoluminescence spectra.
The pulsed laser ablation in liquid approach was used to synthesize gallium nitride (GaN) nanoparticles (NPs) at six distinct ablation energies. GaN target with purity of 99.999% submerged in 5 ml ethanol of 99.99% purty and fired with a Nd:YAG pulsed laser. The nanoparticle was deposited on a quartz substrate using the drop cast technique. Two peaks of h-GaN nanostructures are detected in the XRD pattern, at 2 theta = 34.64 and 37.98, reflected from the (002) and (100) planes, respectively. The hexagonal crystal nature of GaN is indicated by the structural features, which is shown in the XRD pattern. The greatest laser power, 2000 mJ, shows a modest emission peaking at 3.34 eV, according to photoluminescence (PL) spectra. At 1400 mJ, the highest emission peak was 3.83 eV. The pulsed laser is used in this study to create nanoparticles with various characteristics.
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