High performance ultraviolet A/ultraviolet C detector based on amorphous Ga2O3/ZnO Nanoarrays/GaN structure

High-performance ultraviolet (UV) photodetector was fabricated based on amorphous Ga2O3/ZnO nanoarrays (NRs) on p-GaN film. The obtained detector displays excellent UV sensing properties which covers UV-A/UV-C region with fast response without external bias. The high photosensitivity can be ascribed to the geometry of the match-like Ga2O3/ZnO NRs and emergence of the built-in field between the amorphous Ga2O3 and ZnO interface. The results will provide a new method to improve the ZnO/GaN heterostructure for applications in broadband ultraviolet sensing.

Automated summary

A high-performance ultraviolet (UV) photodetector based on amorphous Ga2O3/ZnO nanoarrays on p-GaN film was successfully fabricated. This detector exhibits excellent UV sensing properties in the UV-A/UV-C region with fast response without external bias. The high photosensitivity is attributed to the geometry of the match-like Ga2O3/ZnO nanoarrays and the emergence of built-in field between the amorphous Ga2O3 and ZnO interface. These findings provide a new method to enhance the ZnO/GaN heterostructure for broadband ultraviolet sensing applications.