Investigating the impact of alpha particles energy level on the DNA-Schottky diode behavior

In this work, the influence of the alpha energy level on the Al/DNA/Al Schottky diode was examined through J-V curve. The diodes were exposed to alpha radiation energy ranging from 0.625 MeV to 5.485 MeV under the same irradiation time. Diode parameters, such as series and shunt resistance, were determined by using a conventional method. The current density and electrical conductivity were also tested. From the results, it is observed that the series resistance for the irradiated samples is found to be higher than the non-radiated one, and its behavior is approximately equivalent to the hypersensitivity phenomena. The current density, for all samples, increases with increasing the electric field. Furthermore, the electrical conductivity of the non-radiated sample was higher than the alpha irradiated samples at a voltage of 6.0 V. These results highlight the significance of using this device as a detector for alpha particles' radiation in bioelectronics applications.

Automated summary

This study examined the influence of alpha energy level on the Al/DNA/Al Schottky diode through J-V curve. The series resistance for irradiated samples was found to be higher, while the current density increased with increasing electric field. The electrical conductivity of non-radiated samples was higher at a voltage of 6.0 V, highlighting the significance of this device as a detector for alpha particles' radiation in bioelectronics applications.