期刊
ORGANIC ELECTRONICS
卷 109, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.orgel.2022.106617
关键词
Cesium iodide; Perovskite solar cells; X-ray detectors; Scintillator; Sensitivity
资金
- industrial innovation infrastructure construction project - Ministry of Trade, Industry and Energy, South Korea [P0014717]
- Korea Evaluation Institute of Industrial Technology (KEIT) [P0014717] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This paper investigates the effects of adding a small amount of cesium iodide (CsI) to the precursor solution of the organic-inorganic hybrid methylammonium lead iodide perovskite (MAPbI(3)). The results show that CsI can control the size and aggregation behavior of the perovskite crystals, leading to a smoother perovskite film. The perovskite solar cells and X-ray detectors using Cs(0.1)MA(0.9)PbI(3) as the active layer demonstrate higher conversion efficiency and sensitivity, respectively. Density functional theory calculations explain the enhancement of device performance characteristics by CsI in terms of improved charge extraction and reduced charge carrier recombination.
Organic-inorganic hybrid methylammonium lead iodide perovskite (MAPbI(3)) has attracted widespread attention for its potential use in a range of optoelectronic devices. In this paper, we describe the fabrication of inverted-type perovskite/fullerene planar heterojunction perovskite solar cells and X-ray detectors where a small amount of cesium iodide (CsI) was added to the MAPbI(3) precursor solution. The appearance and crystal structure of the constructed perovskite active layer were carefully studied by microscope and X-ray diffraction measurements, respectively. The results reveal that the CsI additive can control the size and aggregation behavior of the perovskite crystals, helping to form a smoother perovskite film. Thus, the constructed perovskite solar cell with its Cs(0.1)MA(0.9)PbI(3) active layer (AC) revealed a power conversion efficiency (PCE) of 11.16 +/- 0.13%, which is a significant improvement over conventional planar heterojunction devices that use pristine MAPbI(3) AC (PCE 9.12 +/- 0.11%). We also fabricated an X-ray detector using the same Cs(0.1)MA(0.9)PbI(3), this achieved a maximum sensitivity of 3.26 mA/Gy cm(2). Density functional theory calculations investigate the origin of the enhancement of device performance characteristics. Interestingly, the results show that perovskite surfaces constructed with a suitable amount of CsI can effectively enhance charge extraction and reduce charge carrier recombination. This work provides an efficient way to improve carrier transfer, which will inspire other perovskites optoelectronic applications.
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