High-Power Flip-Chip Bonded Photodiode With 110 GHz Bandwidth

Back-illuminated flip-chip-bonded charge-compens ated modified uni-traveling-carrier photodiodes (PDs) with bandwidths in excess of 110 GHz are demonstrated. PDs with 10- and 6-mu m-diameters deliver RF output power levels as high as 9.6 dBm at 100 GHz and 7.8 dBm at 110 GHz, respectively. An analytical model based on parameter extraction from S-parameter fitting was used to assess the bandwidth limiting factors.