Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits

We report a method for integrating GaAswaveguide circuits containing self-assembled quantum dots on a Si/SiO2 wafer, using die-to-wafer bonding. The large refractive-index contrast between GaAs and SiO2 enables fabricating single-mode waveguides without compromising the photon-emitter coupling. Anti-bunched emission from individual quantum dots is observed, along with a waveguide propagation loss <7 dB/mm, which is comparable with the performance of suspended GaAs circuits. These results enable the integration of quantum emitters with different material platforms, towards the realization of scalable quantum photonic integrated circuits.

Automated summary

We present a method for integrating GaAs waveguide circuits containing self-assembled quantum dots on a Si/SiO2 wafer using die-to-wafer bonding. The large refractive-index contrast between GaAs and SiO2 allows the fabrication of single-mode waveguides without compromising the photon-emitter coupling. We observe anti-bunched emission from individual quantum dots and achieve a waveguide propagation loss of <7 dB/mm, which is comparable to the performance of suspended GaAs circuits. These results enable the integration of quantum emitters with different material platforms, paving the way for scalable quantum photonic integrated circuits.