4.6 Article

Effect of ZnO seed layer annealing temperature on the growth of ZnO nanorods and its catalytic application

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OPTICAL MATERIALS
卷 131, 期 -, 页码 -

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ELSEVIER
DOI: 10.1016/j.optmat.2022.112652

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Annealing temperature; RhB pollutant; ZnO nanorods; ZnO seed Layer

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This paper investigates the effect of annealing temperature of ZnO seed layer on the growth of ZnO nanorods. The results show that the size and morphology of ZnO nanorods change with increasing annealing temperature, accompanied by a decrease in green emission and transmittance.
This paper reports the effect of ZnO seed layer annealing temperature on the growth of ZnO nanorods. ZnO nanorods were grown on fluorine-tin oxide (FTO) substrate via simple and facile liquid phase deposition (LPD) at low temperature. High density homogeneous ZnO nanorods have successfully been synthesized directly on the substrate at 60 degrees C for 4 h reaction time. It was observed that average diameter and length of ZnO nanorod increased, when the annealing temperature increased from 300 degrees C to 500 degrees C. Field emission scanning electron microscope (FESEM) images reveal that by increasing the annealing temperature, the homogeneity, particle size, orientation and morphological shape of ZnO nanostructure have been modified. The photoluminescence (PL) spectra reveal the decrease in green emission as the annealing temperature was increased. The UV-Visible characterization confirms the decrease in the transmittance as the annealing temperature was increased.

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