4.5 Article

Interaction between disclinated non-equilibrium grain boundaries and radiation-induced interstitial/vacancy in tungsten

期刊

NUCLEAR FUSION
卷 62, 期 12, 页码 -

出版社

IOP Publishing Ltd
DOI: 10.1088/1741-4326/ac90d6

关键词

disclinations; grain boundaries; MD simulations

资金

  1. Natural Science Foundation of China [11875015]
  2. National MCF Energy R&D Program of China [2018YFE0308101]

向作者/读者索取更多资源

The presence of disclinated non-equilibrium grain boundaries in polycrystalline materials obtained by severe plastic deformation was found to have a stronger affinity for irradiation-induced defects compared to equilibrium grain boundaries. Increasing the proportion of disclinated non-equilibrium grain boundaries may be an effective approach in developing new-generation irradiation-resistant materials.
Experimental works show that there are plenty of disclinated non-equilibrium grain boundaries (GBs) in polycrystalline materials obtained by the severe plastic deformation method. How these GBs affect the irradiation-induced defects is still an open question. In the present work, molecular dynamics simulation was used to investigate the interaction between disclinated non-equilibrium GBs and irradiation-induced interstitial/vacancy in tungsten. There exists a long-range stress field around the disclinated non-equilibrium GBs. Such a long-range stress field leads to strong interaction between interstitial/vacancy and the GB. The interaction energy calculations suggest that interstitial and vacancy can be attracted strongly by non-equilibrium GBs containing negative and positive disclinations, respectively. This unique interaction behavior is further confirmed by diffusion of interstitials/vacancies near these GBs. The present work clearly demonstrates that disclinated non-equilibrium GBs are stronger irradiation-induced defect sinks than their equilibrium counterparts. So increasing the proportion of disclinated non-equilibrium GBs may be an effective way to develop new-generation irradiation-resistant materials.

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