☆ 4.8 Review

Two-dimensional devices and integration towards the silicon lines

NATURE MATERIALS (2022)

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Review Chemistry, Multidisciplinary

Infrared Photodetectors Based on 2D Materials and Nanophotonics

Jiajia Zha et al.

Summary: This review comprehensively summarizes the latest progress in infrared photodetectors based on 2D materials and nanophotonic structures, discussing the advantages of using 2D materials for infrared photodetectors, and classifying them based on their detection mechanisms, key figures-of-merit, and the principle of absorption enhancement using nanophotonic approaches.

ADVANCED FUNCTIONAL MATERIALS (2022)

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Review Chemistry, Multidisciplinary

The Road for 2D Semiconductors in the Silicon Age

Shuiyuan Wang et al.

Summary: The fusion of 2D materials with silicon ICs shows potential to drive advanced performance in ICs, overcome challenges in silicon ICs, and create technologies beyond the von Neumann architecture.

ADVANCED MATERIALS (2022)

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Article Multidisciplinary Sciences

An application-specific image processing array based on WSe2 transistors with electrically switchable logic functions

Senfeng Zeng et al.

Nature Communications (2022)

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Article Multidisciplinary Sciences

An artificial neural network chip based on two-dimensional semiconductor

Shunli Ma et al.

Summary: Research has shown that a MoS2 artificial neural network (ANN) chip with multiply-and-accumulate (MAC), memory, and activation function circuits has been successfully developed. Based on the design and optimization of analog ANN circuits, a tactile digit recognition application was demonstrated. This work not only showcases the potential of 2D semiconductors in wafer-scale integrated circuits, but also opens up possibilities for their future application in AI computation.

SCIENCE BULLETIN (2022)

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Article Chemistry, Multidisciplinary

Are 2D Interfaces Really Flat?

Zhihui Cheng et al.

Summary: This study investigates the flatness of 2D interfaces under different conditions using cross-sectional scanning transmission electron microscopy. It reveals that dry transfer significantly alters the interface structure and that 3D metal-2D interfaces are more uneven compared to other metal-2D interfaces. Furthermore, the interfacial transformations in the contact and channel regions affect the electrical characteristics of MoS2-based field-effect transistors, with hBN encapsulation leading to improved device transconductance.

ACS NANO (2022)

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Review Chemistry, Multidisciplinary

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

Michael Waltl et al.

Summary: In recent years, research efforts have been focused on fabricating transistors utilizing 2D semiconductors, with small circuits already demonstrated. The high trap densities in 2D transistors compared to silicon devices result in increased time-dependent variability, affecting circuit stability.

ADVANCED MATERIALS (2022)

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Article Multidisciplinary Sciences

Vertical MoS2 transistors with sub-1-nm gate lengths

Fan Wu et al.

Summary: In this study, sidewall MoS2 transistors with sub-1 nm physical gate length were successfully fabricated by using the edge of a graphene layer as the gate electrode. These devices exhibit excellent performance characteristics and could potentially advance the scaling down of next-generation electronic devices.

NATURE (2022)

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Article Multidisciplinary Sciences

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

Lei Liu et al.

Summary: This study reports the successful nucleation of bilayer molybdenum disulfide (MoS2) on c-plane sapphire, achieving uniformity in the nucleation process. The design of atomic terrace height on c-plane sapphire allows for an edge-nucleation mechanism and the coalescence of MoS2 domains into continuous, centimeter-scale films. Field-effect transistor devices based on bilayer MoS2 channels show improved mobility and reduced variation compared to monolayer films.

NATURE (2022)

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Article Multidisciplinary Sciences

High-κ perovskite membranes as insulators for two-dimensional transistors

Jing-Kai Huang et al.

Summary: The scaling of silicon metal-oxide-semiconductor field-effect transistors has been successful, but with the thinning of silicon at smaller technology nodes, new challenges arise. In this study, researchers explore the use of ultrahigh-kappa single-crystalline perovskite strontium-titanium-oxide membranes as gate dielectrics for 2D field-effect transistors. These membranes have desirable properties and can mitigate the issues related to using ultrahigh-kappa dielectrics.

NATURE (2022)

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Article Engineering, Electrical & Electronic

How to report and benchmark emerging field-effect transistors

Zhihui Cheng et al.

Summary: This study proposes guidelines for reporting and benchmarking the parameters and performance of field-effect transistors, addressing challenges in device performance assessment and offering a more consistent and meaningful approach for the field to progress.

NATURE ELECTRONICS (2022)

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Review Chemistry, Physical

Electronics based on two-dimensional materials: Status and outlook

Senfeng Zeng et al.

Summary: This article discusses the use of 2D materials in the traditional semiconductor industry to maintain development through More Moore and More than Moore pathways, emphasizing the importance of these materials in achieving higher performance and functional diversity in electronic systems.

NANO RESEARCH (2021)

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Article Chemistry, Multidisciplinary

Versatile Post-Doping toward Two-Dimensional Semiconductors

Yuya Murai et al.

Summary: A simple and direct method has been developed for controlled postdoping of 2D transition metal dichalcogenides using low-kinetic-energy dopant beams and high-flux chalcogen beams. The doped TMDs showed significant changes in electronic properties, with p-type action and a drastic increase in current. Position-selective doping was also demonstrated using a patterned mask on the surface, showing the versatility of this postdoping method for future 2D-based electronics.

ACS NANO (2021)

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Article Chemistry, Multidisciplinary

Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing

Xuewei Feng et al.

Summary: A novel structure of multiterminal memtransistor crossbar array with increased parallelism in programming via independent gate control is demonstrated, achieving low power consumption in dense cell sizes. The architecture is capable of performing multiply-and-accumulate operation with high recognition accuracy. Such computing paradigm is considered revolutionary for enabling data-centric applications in artificial intelligence and Internet-of-things.

ACS NANO (2021)

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Article Chemistry, Multidisciplinary

Emerging Light-Emitting Materials for Photonic Integration

De-Sheng Liu et al.

Summary: The information explosion era is driving the development of large-bandwidth high-data-rate optical interconnection technology. The lack of efficient light sources has been a major hurdle in optical interconnections, but 2D materials and metal halide perovskites have emerged as promising candidates with distinctive advantages. Recent progress in light-emitting materials, including Ge-on-Si, III-V-on-Si lasers, and advancements in 2D and perovskite materials for photonic integration, are discussed in this report. Challenges and future prospects of these emerging materials in the development of efficient light sources are also addressed.

ADVANCED MATERIALS (2021)

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Article Engineering, Electrical & Electronic

Two-dimensional transistors with reconfigurable polarities for secure circuits

Peng Wu et al.

Summary: This research demonstrates the potential of transistors using two-dimensional black phosphorus as the active material for hardware security applications, showing dynamic polarity switching capability and excellent performance under low voltage operation.

NATURE ELECTRONICS (2021)

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Article Engineering, Electrical & Electronic

High On-State Current in Chemical Vapor Deposited Monolayer MoS2 nFETs With Sn Ohmic Contacts

Ang-Sheng Chou et al.

Summary: By adopting Sn metal as the Ohmic contact metal on MoS2 and using high-melting-point capping metal, the performance of 2D semiconductor devices has been improved, providing a practical pathway to form low-resistance metal contacts on 2D semiconductors.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Multidisciplinary Sciences

Promises and prospects of two-dimensional transistors

Yuan Liu et al.

Summary: The article reviews the promise and current status of 2D transistors, emphasizing the potential misestimation or misinterpretation of widely used device parameters. It suggests using more reliable methods to assess the potential of diverse 2D semiconductors and highlights key technical challenges in optimizing the performance of 2D transistors.

NATURE (2021)

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Article Multidisciplinary Sciences

Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

Arne Quellmalz et al.

Summary: The study presents a generic methodology for large-area integration of 2D materials through adhesive wafer bonding, utilizing equipment, processes, and materials readily available in large-scale semiconductor manufacturing lines. This approach is suitable for back end of the line integration of 2D materials on top of integrated circuits, with the potential to accelerate progress in electronics, photonics, and sensing. Existing integration approaches for 2D materials often degrade material properties and are not compatible with industrial processing, highlighting the need for new strategies like adhesive wafer bonding.

NATURE COMMUNICATIONS (2021)

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Review Chemistry, Multidisciplinary

Atomic-Layer-Deposition-Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

Youngjun Kim et al.

Summary: The synthesis and modulation of 2D transition metal chalcogenides by ALD play a crucial role in nanoelectronics, sensors, and energy applications.

ADVANCED MATERIALS (2021)

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Article Multidisciplinary Sciences

Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure

Aujin Hwang et al.

Summary: Multispectral photodetectors are emerging devices capable of detecting photons in multiple wavelength ranges such as visible (VIS) and near infrared (NIR). These detectors provide additional information beyond human vision, including thermal image and night vision, and are hindered by structural complexity. The proposed Ge/MoS2 van der Waals heterojunction photodetector simplifies operation and reduces peripheral circuitry, offering potential integration of VIS/NIR vision for various applications.

SCIENCE ADVANCES (2021)

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Article Multidisciplinary Sciences

Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope

Jingli Wang et al.

Summary: Ultra-thin 2D semiconductors are considered promising channel materials for low-power transistors with small subthreshold swing and low leakage current. This study demonstrates a low-temperature process to transfer metal gate to 2D MoS2 for high-quality interface, resulting in sub-1 V operation voltage and subthreshold slope close to the thermal limit. By excluding extrinsic doping and increasing contact distance, high-barrier Pt-MoS2 Schottky junction replaces MOS capacitor in FETs, enabling logic functions in a single transistor.

SCIENCE ADVANCES (2021)

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Article Engineering, Electrical & Electronic

The development of integrated circuits based on two-dimensional materials

Kaichen Zhu et al.

Summary: The paper discusses the development of integrated circuits based on layered two-dimensional materials, evaluating the most advanced circuits fabricated so far and exploring key challenges that need to be addressed. It also proposes a roadmap for future development and considers potential commercial applications and challenges for highly scaled circuits.

NATURE ELECTRONICS (2021)

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Article Engineering, Electrical & Electronic

A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film

Kailang Liu et al.

Summary: Inorganic molecular crystal films of antimony trioxide fabricated via thermal evaporation deposition can serve as van der Waals dielectric in molybdenum disulfide transistors, leading to enhanced electron mobility and reduced hysteresis in transfer curves.

NATURE ELECTRONICS (2021)

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Review Engineering, Electrical & Electronic

Transistors based on two-dimensional materials for future integrated circuits

Saptarshi Das et al.

Summary: This paper examines the development of field-effect transistors based on two-dimensional materials for VLSI technology, highlighting the challenges that need to be addressed such as reducing contact resistance, stable doping schemes, mobility engineering, and high-k dielectric integration. The review emphasizes the importance of large-area growth of uniform 2D layers in ensuring low defect density and clean interfaces. Furthermore, potential applications of 2D transistors in various futuristic technologies are discussed.

NATURE ELECTRONICS (2021)

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Article Multidisciplinary Sciences

Ultralow contact resistance between semimetal and monolayer semiconductors

Pin-Chun Shen et al.

Summary: The article discusses achieving ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides, suppressing metal-induced gap states and significantly reducing contact resistance. Experimental results demonstrate zero Schottky barrier height and high on-state current density on multilayer MoS2.

NATURE (2021)

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Article Engineering, Electrical & Electronic

Graphene-based physically unclonable functions that are reconfigurable and resilient to machine learning attacks

Akhil Dodda et al.

Summary: Graphene has properties suitable for Internet of Things devices, but deployment may require developing graphene-based hardware security primitives. A physically unclonable function (PUF) using disorder in graphene field-effect transistors' carrier transport can resist machine learning attacks and be reconfigurable without physical intervention. The PUF operates with ultralow power, is scalable, stable over time, reliable against temperature and voltage variations, and can withstand advanced computational attacks.

NATURE ELECTRONICS (2021)

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Article Chemistry, Multidisciplinary

Variability and Yield in h-BN-Based Memristive Circuits: The Role of Each Type of Defect

Yaqing Shen et al.

Summary: In the race to fabricate solid-state nano/microelectronic devices using 2D layered materials, memristors show higher tolerance to defects compared to transistors and memtransistors, making them easier to achieve high yield and low variability.

ADVANCED MATERIALS (2021)

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Article Chemistry, Multidisciplinary

Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors

Jae-Keun Kim et al.

Summary: Doping in transition metal dichalcogenides (TMDCs) can affect charge transport properties, especially the Coulomb scattering induced by dopant counterions on the surface of TMDCs. The amount of charge transfer is related to doping density and the contribution of each dopant ion towards Coulomb scattering.

ADVANCED MATERIALS (2021)

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Article Engineering, Electrical & Electronic

Optimizing the Kerr Nonlinear Optical Performance of Silicon Waveguides Integrated With 2D Graphene Oxide Films

Yuning Zhang et al.

Summary: Theoretical study on the Kerr nonlinear optical performance of silicon nanowire waveguides integrated with 2D layered graphene oxide films reveals significant enhancement of Kerr nonlinearity. Optimization of waveguide geometry and GO film thickness can increase the effective nonlinear parameter and FOM. By evaluating the spectral broadening induced by self-phase modulation, the trade-off between enhancing Kerr nonlinearity and minimizing loss is examined.

JOURNAL OF LIGHTWAVE TECHNOLOGY (2021)

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Article Nanoscience & Nanotechnology

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Taotao Li et al.

Summary: This study successfully achieved epitaxial growth of 2-inch monolayer molybdenum disulfide single crystals on a sapphire substrate, breaking through the technical challenges in the field of MoS2. Tests showed that the MoS2 has a single crystal structure with excellent substrate uniformity, and its device performance has reached a high level.

NATURE NANOTECHNOLOGY (2021)

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Article Nanoscience & Nanotechnology

Ultrafast non-volatile flash memory based on van der Waals heterostructures

Lan Liu et al.

Summary: The study demonstrates an ultrafast non-volatile flash memory based on MoS2/hBN/multilayer graphene, achieving very fast writing/erasing speeds through improved Fowler-Nordheim tunneling. Suitable barrier height, gate coupling ratio, and clean interface are identified as key factors for the breakthrough performance of the flash memory devices.

NATURE NANOTECHNOLOGY (2021)

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Article Multidisciplinary Sciences

2D materials-based homogeneous transistor-memory architecture for neuromorphic hardware

Lei Tong et al.

Summary: In this study, a novel device architecture combining tungsten diselenide and lithium niobate is proposed for use as a nonlinear transistor and nonvolatile memory. Based on this homogeneous architecture, an integrated system for binary classification and ternary content-addressable memory design for neuromorphic hardware is also investigated.

SCIENCE (2021)

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Article Multidisciplinary Sciences

Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry

Seongin Hong et al.

Summary: Various large-area growth methods have been developed for two-dimensional transition metal dichalcogenides, but have not been used for synthesizing active pixel image sensors. An active pixel image sensor array with bilayer MoS2 film was successfully prepared and exhibited high photoresponsivity. The main mechanism for the high photoresponsivity of bilayer MoS2 phototransistors is attributed to a photo-gating effect by holes trapped at subgap states.

NATURE COMMUNICATIONS (2021)

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Review Optics

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

Chaoyue Liu et al.

Summary: This review discusses recent progress in Si/2DM PDs operating in the near-infrared to mid-infrared wavelength range, covering operation mechanisms, device configurations, waveguide-integrated PDs, surface-illuminated PDs, and outlook for 2DM PDs on silicon.

LIGHT-SCIENCE & APPLICATIONS (2021)

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Article Engineering, Electrical & Electronic

Logic gates based on neuristors made from two-dimensional materials

Huawei Chen et al.

Summary: By leveraging the intrinsic polarity of two-dimensional materials, single neuristors can function as XNOR, NOR, OR, and AND logic gates, showcasing a versatile capability for logic operations.

NATURE ELECTRONICS (2021)

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Article Engineering, Electrical & Electronic

Remote modulation doping in van der Waals heterostructure transistors

Donghun Lee et al.

Summary: Remote modulation doping through van der Waals heterostructure effectively enhances carrier modulation and reduces impurity scattering, leading to improved charge transport in two-dimensional semiconductors. In comparison, direct doping introduces impurities that hinder charge transport, resulting in lower mobility.

NATURE ELECTRONICS (2021)

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Article Materials Science, Multidisciplinary

Two-dimensional materials enabled next-generation low-energy compute and connectivity

Arnab Pal et al.

Summary: This article provides an overview of key technological innovations achieved with 2D materials in the field of nanoelectronics, highlighting the potential of this material family in developing brain-inspired ultra low-energy on-chip computing and communication techniques to usher in a new era in electronics.

MRS BULLETIN (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering

K. P. O'Brien et al.

Summary: 2D CMOS transistors made with TMD materials show promising potential as a replacement for silicon transistors. The research demonstrates record NMOS and PMOS performance, as well as growth options for various TMD films.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB

Quentin Smets et al.

Summary: The study analyzes gate length scaling of WS2 transistors, demonstrating the achievement of high maximum current through low side contact resistance and showing low hysteresis and high device yield. Moreover, it is shown that mobility has a significant impact on I-on. The results suggest that improved short-gate control can be achieved through optimized device configuration.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Antimony Semimetal Contact with Enhanced Thermal Stability for High Performance 2D Electronics

Ang-Sheng Chou et al.

Summary: The research demonstrates the clear advantages of Sb as a novel semimetal contact option in 2D material devices, showing near-zero Schottky barrier height, low contact resistance value, and improved thermal stability, which are crucial for high performance 2D material devices.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Article Multidisciplinary Sciences

Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

Tse-An Chen et al.

NATURE (2020)

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Article Multidisciplinary Sciences

Ultrafast machine vision with 2D material neural network image sensors

Lukas Mennel et al.

NATURE (2020)

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Article Materials Science, Multidisciplinary

Ultrasensitive and Broadband All-Optically Controlled THz Modulator Based on MoTe2/Si van der Waals Heterostructure

Jie Qiao et al.

ADVANCED OPTICAL MATERIALS (2020)

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Review Chemistry, Multidisciplinary

2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges

Teng Tan et al.

ADVANCED SCIENCE (2020)

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Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation

Tian‐Yu Wang et al.

Advanced Science (2020)

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Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

Chen Pan et al.

NATURE ELECTRONICS (2020)

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A native oxide high-κ gate dielectric for two-dimensional electronics

Tianran Li et al.

NATURE ELECTRONICS (2020)

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Ultralow-dielectric-constant amorphous boron nitride

Seokmo Hong et al.

NATURE (2020)

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Two-dimensional materials for next-generation computing technologies

Chunsen Liu et al.

NATURE NANOTECHNOLOGY (2020)

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Insulators for 2D nanoelectronics: the gap to bridge

Yury Yu. Illarionov et al.

NATURE COMMUNICATIONS (2020)

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Article Materials Science, Multidisciplinary

Enhanced Four-Wave Mixing in Silicon Nitride Waveguides Integrated with 2D Layered Graphene Oxide Films

Yang Qu et al.

ADVANCED OPTICAL MATERIALS (2020)

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Article Engineering, Electrical & Electronic

Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

Na Li et al.

NATURE ELECTRONICS (2020)

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Article Engineering, Electrical & Electronic

Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

Shaochuan Chen et al.

NATURE ELECTRONICS (2020)

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Review Nanoscience & Nanotechnology

Bandgap engineering of two-dimensional semiconductor materials

A. Chaves et al.

NPJ 2D MATERIALS AND APPLICATIONS (2020)

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Proceedings Paper Engineering, Electrical & Electronic

Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab

I Asselberghs et al.

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)

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Review Optics

Hybrid/Integrated Silicon Photonics Based on 2D Materials in Optical Communication Nanosystems

Jie You et al.

LASER & PHOTONICS REVIEWS (2020)

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Article Multidisciplinary Sciences

Logic-in-memory based on an atomically thin semiconductor

Guilherme Migliato Marega et al.

NATURE (2020)

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Review Chemistry, Multidisciplinary

Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

Mingsheng Long et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

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Article Multidisciplinary Sciences

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Yan Wang et al.

NATURE (2019)

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Article Multidisciplinary Sciences

All-optical spiking neurosynaptic networks with self-learning capabilities

J. Feldmann et al.

NATURE (2019)

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Article Nanoscience & Nanotechnology

Small footprint transistor architecture for photoswitching logic and in situ memory

Chunsen Liu et al.

NATURE NANOTECHNOLOGY (2019)

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Article Multidisciplinary Sciences

Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport

Fu Zhang et al.

SCIENCE ADVANCES (2019)

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Article Chemistry, Multidisciplinary

High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition

Domenico De Fazio et al.

ACS NANO (2019)

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Article Chemistry, Multidisciplinary

Kinetic modulation of graphene growth by fluorine through spatially confined decomposition of metal fluorides

Can Liu et al.

NATURE CHEMISTRY (2019)

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Review Multidisciplinary Sciences

Graphene and two-dimensional materials for silicon technology

Deji Akinwande et al.

NATURE (2019)

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Article Physics, Applied

High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer

Yudan Wang et al.

APPLIED PHYSICS LETTERS (2019)

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Review Chemistry, Multidisciplinary

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Peng Wang et al.

SMALL (2019)

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Article Multidisciplinary Sciences

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Maheswari Sivan et al.

NATURE COMMUNICATIONS (2019)

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Review Chemistry, Physical

Two-dimensional materials in perovskite solar cells

Peng You et al.

MATERIALS TODAY ENERGY (2019)

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Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

Yury Yu Illarionov et al.

NATURE ELECTRONICS (2019)

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Article Engineering, Electrical & Electronic

Ultimate Monolithic-3D Integration With 2D Materials: Rationale, Prospects, and Challenges

Junkai Jiang et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)

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Article Chemistry, Multidisciplinary

Hydrogen plasma-treated MoSe2 nanosheets enhance the efficiency and stability of organic photovoltaics

Hao-Cheng Wang et al.

NANOSCALE (2019)

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THE GROWING APPLICATION FIELD OF LASER DEBONDING: FROM ADVANCED PACKAGING TO FUTURE NANOELECTRONICS

Alain Phommahaxay et al.

2019 INTERNATIONAL WAFER LEVEL PACKAGING CONFERENCE (IWLPC) (2019)

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Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

Weisheng Li et al.

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MoS2 photodetectors integrated with photonic circuits

Juan Francisco Gonzalez Marin et al.

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Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

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Molecular Beam Epitaxy of Highly Crystalline MoSe2 on Hexagonal Boron Nitride

Sock Mui Poh et al.

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Minimizing residues and strain in 2D materials transferred from PDMS

Achint Jain et al.

NANOTECHNOLOGY (2018)

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Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions

Yuan Liu et al.

NATURE (2018)

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Article Multidisciplinary Sciences

Zero-static power radio-frequency switches based on MoS2 atomristors

Myungsoo Kim et al.

NATURE COMMUNICATIONS (2018)

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Article Optics

Hybrid graphene metasurfaces for high-speed mid-infrared light modulation and single-pixel imaging

Beibei Zeng et al.

LIGHT-SCIENCE & APPLICATIONS (2018)

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Article Multidisciplinary Sciences

Solution-processable 2D semiconductors for high-performance large-area electronics

Zhaoyang Lin et al.

NATURE (2018)

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Review Nanoscience & Nanotechnology

Graphene-based integrated photonics for next-generation datacom and telecom

Marco Romagnoli et al.

NATURE REVIEWS MATERIALS (2018)

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Article Engineering, Electrical & Electronic

Writing monolithic integrated circuits on a two-dimensional semiconductor with a scanning light probe

Seung-Young Seo et al.

NATURE ELECTRONICS (2018)

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Article Engineering, Electrical & Electronic

Low-power carbon nanotube-based integrated circuits that can be transferred to biological surfaces

Li Xiang et al.

NATURE ELECTRONICS (2018)

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Article Multidisciplinary Sciences

High-resolution non-destructive three-dimensional imaging of integrated circuits

Mirko Holler et al.

NATURE (2017)

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