期刊
NANO LETTERS
卷 22, 期 17, 页码 6888-6894出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c01050
关键词
Superdiffusive thermal transport; thermal conductivity; silicon-germanium thin films; molecular beam epitaxy; interfacial thermal resistance
类别
资金
- General Research Fund - Research Grants Council of the Hong Kong Special Administrative Region, China [14202818]
- Hong Kong PhD Fellowship Scheme [PF17-08281]
- National Natural Science Foundation of China (NSFC) [51732006]
This study provides direct experimental evidence that superdiffusive thermal transport exists in SiGe alloys, as the thermal conductivity follows a power law relationship with film thickness. This research is significant for understanding the unique phenomenon of heat conduction.
Superdiffusive thermal transport represents a unique phenomenon in heat conduction, which is characterized by a size (L) dependence of thermal conductivity (kappa) in the form of kappa proportional to L-beta with a constant beta between 0 and 1. Although superdiffusive thermal transport has been theoretically predicted for SiGe alloys, direct experimental evidence is still lacking. Here, we report on a systematic experimental study of the thickness-dependent thermal conductivity of Si0.4Ge0.6 thin films grown by molecular beam epitaxy. The cross-plane thermal conductivity of Si0.4Ge0.6 thin films spanning a thickness range from 20 to 1120 urn was measured in the temperature range 120-320 K via a differential three-omega method. Results show that the thermal conductivity follows a consistent kappa proportional to t(0)(.2)(6) power law with the film thickness (t) at different temperatures, providing direct experimental evidence that alloy-scattering dominated thermal transport in SiGe is superdiffusive.
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