期刊
NANO LETTERS
卷 22, 期 17, 页码 7246-7253出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c02765
关键词
polymeric memristor; atomic switch; filament; polyethylenimine; flexible
类别
资金
- Shanghai Rising Star Program [20QA1406600]
- Center for High-resolution Electron Micros-copy
- Center for High-resolution Electron Microscopy, Soft Matter Nanofab [SMN180827]
- ShanghaiTech University [EM02161943]
- Shanghai Science and Technology Plan [21DZ2260400]
In this work, a flexible polymeric memristor using polyethylenimine incorporated with silver salt is reported, demonstrating superior performances and stability for the construction of flexible electronics.
Polymer-based atomic switch memristors via the formation/ dissolution of atomic-scale conductive filaments are considered as the leading candidate for next-generation nonvolatile memory. However, the instability of conductive filaments of incomplete bridge makes their switching performances unsatisfied. In this work, we report a flexible polymeric memristor using polyethylenimine incorporated with silver salt. The memristor device exhibited superior performances at room temperature with a favorable endurance, high ON/OFF ratio, good retention, and low operating voltage. These satisfactory performances are attributed to the pre-existing Ag ions in the polymer, guiding the formation of a robust Ag filament. In addition, the device shows stable bipolar switching behavior in bending conditions or after hundreds of bending cycles. In our work, we provide a simple and efficient method to construct robust filament-based memristors for flexible electronics.
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