PECVD of Vertical Graphene: Local Plasma or Nonlocal Plasma?

Using the plasma-enhanced chemical vapor deposition method, we grow vertical graphene thin films onto SiO2/Si substrates, which is a special format of graphene composed of numerous macroscopically uniformly distributed graphene flakes approximately vertically arranged. The growth parameters, including the growth temperature, growth time and plasma power, are systematically studied and optimized. Most importantly, the function of plasma has been revealed. In the same deposition machine, we have altered the plasma electrode and heater configurations, and found that the vertical graphene can only grow in local plasma environment. That is, the samples have to be well immersed in the plasma sheath electric field. In this way, the vertical growth of graphene and the local enhancement of electric field can form a positive feedback loop, resulting in the continuous growth of vertical graphene. This experiment clarifies the function of plasma electric field in the vertical graphene growth, and can offer hints for the growth of other vertical two-dimensional materials as well. The vertical graphene films are scalable, transfer-free and lithographically patternable, which is compatible with standard semiconductor processing and promising for optoelectronic applications. We have characterized the optical properties of the as-grown vertical graphene films, where a nearly zero transmittance is observed for 1100-2600nm wavelengths, indicating a superstrong absorption in the black colored vertical graphene.

Automated summary

Vertical graphene thin films are successfully grown on SiO2/Si substrates using plasma-enhanced chemical vapor deposition. The function of plasma in the growth process is clarified, and the results can provide insights for the growth of other vertical two-dimensional materials. The scalable and transfer-free nature of the vertical graphene films makes them promising for optoelectronic applications.