4.6 Article

PrMem: Novel flexible biodegradable paper-graphene oxide-based memristor

期刊

MRS BULLETIN
卷 48, 期 3, 页码 214-227

出版社

SPRINGER HEIDELBERG
DOI: 10.1557/s43577-022-00390-7

关键词

Paper; Flexible; Switching; Memristor behavior; Reduction; Graphene Oxide

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The development of flexible memristor devices using paper-based graphene oxide has great potential for wearable electronics. The PrMem device, made of cellulose and reduced graphene oxide, demonstrates resistive switching properties and eliminates the need for additional pumping structures due to its hydrophilic nature. The research opens up new possibilities for using paper-based memristor devices in various applications.
The development of flexible memristor (MR) devices is a nascent research area with great potential to revolutionize wearable electronics. A few flexible MR devices with proven functionality and reliability have been introduced in the literature. This article describes the development of a novel paper MR device, named PrMem, employing a novel low-cost fabrication technique. PrMem consists of three layers: a top electrode, an active layer, and a bottom electrode. All three layers are made of the same materials, specifically, cellulose and reduced graphene oxide with different concentrations. Detailed I-V measurements are carried out to verify the resistive switching property of PrMem. Because the device is made entirely of paper, it is hydrophilic, which means that liquids may flow freely through its porous structure. This simple capillary action eliminates the need for additional mechanical pumping structures, making PrMem a promising candidate for a variety of applications. We are the first to report on the significant potential of flexible GO-based paper MR devices for emerging wearable electronics and sensing applications. Using only paper to make MR has the advantages of being low cost, flexible, effective, biocompatible, and conveniently disposable. Impact statement This article describes the first paper-based flexible graphene oxide memristor device with vertical stack configuration. Developed and reported is a novel, cost-effective fabrication technique for paper electronics. By oxidizing reduced graphene oxide, the fully paper device achieves memristive switching behavior. The devices exhibit analog switching behavior as they undergo a transition from a state of low resistance to a state of high resistance. The device's resistance naturally returns to its initial state without the need for a RESET voltage. The reported findings open a new frontier for research into the use of paper-based memristor devices in a wide range of applications.

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