Comprehensive review of low pull-in voltage RF NEMS switches

The present study focuses on state-of-the-art of the demand, operating principles, design parameters, different materials for beam and dielectric, already existing technologies and current trend of RF M/NEMS switches over the last few years. In this review, the performance parameters of various work have been presented and compared. The different methods of lowering the pull-in voltage are also discussed. Low pull-in voltage can be attained by choosing proper dimensions, and suspended beam material. Graphene derivatives can be used alone or along with graphene layer as suspended beam. The low elastic modulus of suspended beam material reduces the pull-in voltage and improves the switching speed.

Automated summary

This article reviews the recent advancements in demand, operating principles, design parameters, materials, and existing technologies of RF M/NEMS switches. The performance parameters of different works are presented and compared, and the methods of lowering the pull-in voltage are also discussed.