☆ 4.3 Article

Characterization of the carriers' multiplication in Si and SiC power devices by soft-gamma irradiation under cryostatic conditions

MICROELECTRONICS RELIABILITY (2022)

Electric-Field-Dependence Mechanism for Cosmic Ray Failure in Power Semiconductor Devices

Tetsuo Oda et al.

Summary: This article analyzes the electric-field-dependence mechanism for cosmic ray failure in power semiconductor devices. By evaluating the dependence of failure on the drift layer thickness, it was clarified that a bipolar transistor activation mode did not occur under certain conditions. The critical factor for failure was found to be the electric field averaged over the depletion layer width, providing insights for improving cosmic ray durability in device design.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Chemistry, Analytical

Accelerated Tests on Si and SiC Power Transistors with Thermal, Fastand Ultra-Fast Neutrons

Fabio Principato et al.

SENSORS (2020)

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Article Engineering, Electrical & Electronic

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

Gerald Soelkner

MICROELECTRONICS RELIABILITY (2016)

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Article Engineering, Electrical & Electronic

Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes

Hiroaki Asai et al.

IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2012)

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Article Engineering, Electrical & Electronic

Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

S Reggiani et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2005)

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Characterization of the carriers' multiplication in Si and SiC power devices by soft-gamma irradiation under cryostatic conditions

相关参考文献

Electric-Field-Dependence Mechanism for Cosmic Ray Failure in Power Semiconductor Devices

Accelerated Tests on Si and SiC Power Transistors with Thermal, Fastand Ultra-Fast Neutrons

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes

Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

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