Isolation properties and failure mechanisms of vertical Pt/n-GaN SBDs

Article Physics, Applied

GaN-based power devices: Physics, reliability, and perspectives

Matteo Meneghini et al.

Summary: Gallium nitride (GaN) has emerged as an excellent material for power devices, offering advantages such as high-speed/high-voltage and low switching losses. The use of AlGaN/GaN heterostructures allows for the creation of a two-dimensional electron gas with high mobility and large channel density. Research is focusing on vertical device architectures and three-dimensional structures, like fin-shaped, trench-structured, and nanowire-based structures, which show great potential for high power/high-voltage operation.

JOURNAL OF APPLIED PHYSICS (2021)

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Article Physics, Applied

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

Koon Hoo Teo et al.

Summary: GaN technology is expanding rapidly in various application areas, including digital and quantum computing electronics. Developing new GaN devices for higher-voltage and ultra-low-voltage power applications is crucial. GaN CMOS technology is expected to play a key role in realizing a full GaN platform.

JOURNAL OF APPLIED PHYSICS (2021)

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Review Chemistry, Physical

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Kalparupa Mukherjee et al.

Summary: This study discusses the challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs, focusing on addressing breakdown performance and reliability issues. Leakage and doping considerations are crucial for designing vertical GaN-on-Si stacks with high breakdown voltage. Gate design techniques and pulsed techniques combined with light-assisted de-trapping analyses can improve the dynamic performance of the devices.

MATERIALS (2021)

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Article Physics, Applied

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

Xiaolu Guo et al.

Summary: This Letter investigates the reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without argon-implanted termination, revealing the important role of ArIT in reducing leakage and improving breakdown voltage performance.

APPLIED PHYSICS LETTERS (2021)

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Article Engineering, Electrical & Electronic

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

Eldad Bahat Treidel et al.

Summary: The ON-state conductance properties of vertical GaN n-channel trench MISFETs on different GaN substrates were studied, with the best performance seen on ammonothermal GaN substrate. It was found that semiconductor border traps in the p-GaN layer and channel surface roughness scattering significantly impact device performance, with effects dependent on gate trench orientation and GaN substrate defect density.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2021)

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Article Physics, Applied