Reactively-sputtered AlOx passivation layer for self-aligned top-gate amorphous InGaZnO thin-film transistors

The direct-current reactive sputtering of aluminum oxide (AlOx) films with Al target was investigated to provide a preferable passivation layer (PL) for self-aligned top-gate (SATG) amorphous metal oxide semiconductor (AOS) like amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The grown AlOx films exhibited excellent elec-trical characteristics, with major parameters including a relative dielectric constant around 9, breakdown electric field of 3.7 MV/cm, and leakage current of 6.29 x 10(-8) A/cm(2) at 2 MV/cm. It is shown that the AlOx PL, together with a PECVD SiO2 interlayer could provide SATG a-IGZO TFTs with trustworthy environmental and electrical stability.

Automated summary

This study investigates the direct-current reactive sputtering of aluminum oxide films as a preferable passivation layer for self-aligned top-gate amorphous metal oxide semiconductor thin-film transistors. The grown AlOx films exhibit excellent electrical characteristics and, when combined with a PECVD SiO2 interlayer, provide trustworthy environmental and electrical stability for SATG a-IGZO TFTs.