Creep deformation behavior of the Ni-Fe-based GH984G alloy

The creep deformation behavior and microstructure evolution of the Ni-Fe-based GH984G alloy were investigated at temperatures of 700 ?-775 ?, with the stress ranging from 150 MPa to 400 MPa. The results demonstrate that the apparent stress exponent and apparent creep activation energy are 6.53 & PLUSMN; 0.74 and 546.7 & PLUSMN; 6.8 kJ/mol, respectively. The creep activation energy is higher than that of lattice self-diffusion, which is related to the interaction between dislocation and gamma & PRIME; precipitates and can be corrected by threshold stress. The threshold stresses are 109.1 MPa, 51.5 MPa and 24.8 MPa at 700 ?, 750 ? and 775 ?, respectively. The true stress exponent is 4.95 & PLUSMN; 0.14 and the true creep activation energy is determined to be 288.3 & PLUSMN; 4.3 kJ/mol. The microstructure analysis demonstrates that the climbing of a/2 < 110 > perfect dislocation is the primary mechanism of creep at 700 ?. The dislocation climbing and a/6 < 112 > partial dislocation shearing into gamma & PRIME; are both significant factors during creep deformation at 750 ?. The creep damage tolerance of 6.4 & PLUSMN; 1.1 indicates that microstructural degradation, including gamma & PRIME; and M23C6 coarsening, is the primary creep damage mechanism for the GH984G alloy. The deformation mechanism map for GH984G alloy is established and the creep mechanism within the investigated conditions locates in the power-law creep domain controlled by dislocation climbing.

Automated summary

The creep deformation behavior and microstructure evolution of the Ni-Fe-based GH984G alloy were investigated. The interaction between dislocation and gamma' precipitates is the main reason for the higher creep activation energy than lattice self-diffusion. Dislocation climbing is the primary creep mechanism below 800℃, while dislocation climbing and partial dislocation shearing into gamma' dominate above 800℃. Additionally, microstructural degradation also contributes to creep damage.