Effect of TeO2 on Ag/Si interface contact of crystalline silicon solar cells

Glass frits, as a critical ingredient, plays an important role between Ag electrode and crystalline silicon (c-Si) solar cells and determines sintering properties of the silver paste and contact quality with c-Si solar cells. Here glass frits with different contents of TeO2 are prepared and used to investigate the sintering process and effects of contact quality of Ag pastes on c-Si solar cells. Microstructures and electrical properties of the Ag/Si contact interface and performances of the resultant c-Si solar cells are characterized systematically. The results show that TeO2 promotes the growth of Ag nanocrystallites in the glass layer between Ag grids and c-Si wafers, thus reduces the contact resistance of the Ag grids and improves the contact quality of the Ag/Si interfaces. Moreover, TeO2 improves the densification and conductive performances of the Ag grids. However, excessive TeO2 has a negative effect on the conductivity of the Ag grid due to the increased thickness of the glass layer. Based on the competing factors played by TeO2, the conversion efficiency is the highest at an optimized TeO2 content similar to 40%.

Automated summary

This study investigates the effects of different contents of TeO2 in glass frits on the sintering process and contact quality of Ag pastes on c-Si solar cells. The results show that an optimized TeO2 content of around 40% promotes the growth of Ag nanocrystallites, improves contact quality at Ag/Si interfaces, and enhances the densification and conductive performances of Ag grids. However, excessive TeO2 has a negative impact on the conductivity of Ag grids due to increased glass layer thickness.