期刊
MATERIALS LETTERS
卷 324, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.matlet.2022.132683
关键词
Doping; Semiconductors; Lattice thermal conductivity; Defects
资金
- National Natural Science Foundation of China [21371049]
- Natural Science Foundation of Henan Province Research Project [162300410040]
By introducing Sn doping, the GeTe-based material forms a disordered structure, resulting in reduced thermal conductivity and improved thermoelectric performance.
For layered GeTe based materials, a typical strategy to reduce the thermal conductivity of the lattice is to introduce disorder and increase the lattice anharmonicity of the material, while enhancing the mass/stress field fluctuations of the sample. Due to the Sn doping, the GeTe-based material forms a disordered structure, and the resulting strong phonon scattering leads to a sharp decrease in the lattice thermal conductivity over the entire temperature range. In addition, Sn doping was able to enhance the effective mass of the material, significantly increasing the seebeck coefficient of GeTe, ZT 1.49 at 730 K. Finally, the thermoelectric properties of the GeTebased materials synthesized by Sn doping are significantly improved.
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