Heteroepitaxy of (100)-oriented rutile GeO2 film on c-plane sapphire by pulsed laser deposition

Article Physics, Applied

Achieving p-type conductivity in wide-bandgap SnO2 by a two-step process

Wang Fu et al.

Summary: The achievement of high-quality p-type conduction in SnO2 has been demonstrated through a two-step process, resulting in the successful fabrication of p-type Mg-SnO2 epitaxial films. Crucial post-annealing treatment greatly enhances the p-type conductivity of Mg-SnO2.

APPLIED PHYSICS LETTERS (2021)

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Article Materials Science, Multidisciplinary

Preparation of {200} crystal faced SnO2 nanorods with extremely high gas sensitivity at lower temperature

Hong-Yan Xu et al.

Summary: This paper synthesized five different SnO2 samples by a simple synthesis method, and found that different exposed surfaces play a key role in TEA sensing properties. The relationship between TEA sensing activity and SnO2 exposed crystal faces is proposed as follows: (200) > (101) > (110).

RARE METALS (2021)

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Article Physics, Applied

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2

Sieun Chae et al.

Summary: Ultrawide-band-gap (UWBG) semiconductors have great potential for high-power switching with lower energy loss, but their adoption in CMOS technology is impeded by limitations in doping asymmetry. Improvements in ambipolar doping of UWBG materials are needed to widen their range of applications in power electronics and deep-UV optoelectronics.

APPLIED PHYSICS LETTERS (2021)

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Article Physics, Applied

Establishment of a growth route of crystallized rutile GeO2 thin film (≥1 μm/h) and its structural properties

Hitoshi Takane et al.

Summary: The study successfully grew rutile germanium dioxide (r-GeO2) thin films on r-TiO2 substrates using mist chemical vapor deposition, with optimized growth conditions yielding thick r-GeO2 films suitable for high breakdown voltage power electronics devices.

APPLIED PHYSICS LETTERS (2021)

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Article Chemistry, Physical