The hopping Hall effect in reduced graphene oxide

This paper is the first study of the Hall effect in the Efros-Shklovskii variable range hopping conduction regime in the free-standing reduced graphene oxide paper (RGOP). It was found that the temperature dependence of the Hall mobility in RGOP agrees with the Hall effect theory for hopping conduction in disordered semiconductors. In the wide temperature range of 300-25 K, the Hall mobility decreases exponentially with decreasing tem-perature. The variable range hopping conduction channel is the main one contributing to the Hall effect in the RGOP even at room temperature. It was shown that the Hall effect in the RGO can have both positive and negative signs over the entire temperature range. The reduction of disorder and rise in the sp(2)-carbon fraction increase the hopping Hall mobility of charge carriers.

Automated summary

This paper presents the first study on the Hall effect in the Efros-Shklovskii variable range hopping conduction regime in free-standing reduced graphene oxide paper (RGOP). The results show that the temperature dependence of the Hall mobility in RGOP is consistent with the Hall effect theory for hopping conduction in disordered semiconductors. The main contribution to the Hall effect in RGOP comes from the variable range hopping conduction channel, even at room temperature. Additionally, it is found that the Hall effect in RGO can have both positive and negative signs, and the reduction of disorder and increase in the sp(2)-carbon fraction enhance the hopping Hall mobility of charge carriers.