Wave mixing efficiency in InAs/GaAs semiconductor quantum dot optical amplifiers and lasers

The nonlinear features of both semiconductor optical amplifiers (SOAs) and semiconductor lasers, which are made from the same InAs/GaAs quantum dot (QD) wafers, are investigated in detail. By employing pump-probe driven four-wave mixing as an experimental tool, the wave conversion process shows notably different profiles for the two types of devices. Due to the contributions of ultrafast, sub-picosecond mechanisms, such as carrier heating and spectral hole burning, the pump-probe frequency can be easily tuned to the THz range. SOAs generally benefit more from sub-picosecond carrier dynamics, hence exhibiting a higher conversion efficiency (CE) in the THz range, compared to their laser diode counterparts. The discrepancy even exceeds 10 dB. In addition, laser experiments yield some differences from the amplifier ones, hence leading to a higher nonlinear CE at small detuning ranges. These results strongly improve our insight into the fundamental nonlinear properties of InAs/GaAs QD material, and contribute to the conception of novel devices for future on-chip applications in all-optical communication networks, such as signal wavelength conversion, mode-locking, and optical frequency comb generation.

Automated summary

The nonlinear features of semiconductor optical amplifiers (SOAs) and semiconductor lasers made from InAs/GaAs quantum dot (QD) wafers were investigated, showing notably different wave conversion processes due to ultrafast sub-picosecond mechanisms. The SOAs benefit more from sub-picosecond carrier dynamics, exhibiting higher conversion efficiency (CE) in the THz range compared to laser diodes.