Active Manipulation of Luminescent Dynamics via Au NPs-CsPbBr3 Interfacial Engineering

Manipulating photocarrier dynamics for luminescent materials is fundamentally important for steering luminescent properties of optoelectronic devices. Here, interfacial engineering is realized by constructing Au NPs-CsPbBr3 interfaces toward resonant coupling between localized surface plasmon and exciton. Through ultrafast laser spectroscopic measurements, it is demonstrated that photoluminance originating from CsPbBr3 excitonic recombination is significantly enhanced at the interface with prolonged lifetimes. Interfacial photocarrier dynamics are mediated by plasmon-induced hot electron transfer (PHET) and plasmon-induced resonant energy transfer (PIRET) processes. By simply varying excitation laser wavelengths, PHET path of photocarriers is actively switched on and off. The results are of great significance for actively manipulating photocarrier dynamics of perovskite luminescent devices.

Automated summary

Manipulating photocarrier dynamics for luminescent materials is of fundamental importance for controlling the luminescent properties of optoelectronic devices. This study demonstrates the enhancement and prolongation of photoluminescence through interfacial engineering, which enables resonant coupling between localized surface plasmon and exciton. The photocarrier dynamics at the interface are mediated by plasmon-induced hot electron transfer (PHET) and plasmon-induced resonant energy transfer (PIRET) processes, which can be actively switched on and off by varying the excitation laser wavelength. These findings are highly significant for actively manipulating photocarrier dynamics in perovskite luminescent devices.