4.2 Article

Effects of Electron Irradiation on the Properties of ZnO/Au/ZnO Films Deposited on Poly-Imide Substrates

期刊

KOREAN JOURNAL OF METALS AND MATERIALS
卷 60, 期 9, 页码 668-672

出版社

KOREAN INST METALS MATERIALS
DOI: 10.3365/KJMM.2022.60.9.668

关键词

ZnO; Au; XRD; AFM; Figure of merit

资金

  1. Research Fund of University of Ulsan

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In this study, transparent and conductive ZnO/Au/ZnO tri-layer films were deposited on poly-imide films using RF and DC magnetron sputtering. The effect of electron irradiation on the films was investigated. The results showed that electron irradiation improved the surface flatness, grain size, and optical properties of the films. At an electron irradiation energy of 900 eV, the films exhibited higher visible transmittance, lower sheet resistance, and higher figure of merit.
Transparent and conductive ZnO 50 nm/Au 8 nm/ZnO 50 nm tri-layer films were deposited on poly-imide films by radio frequency (RF) and direct current (DC) magnetron sputtering at room temperature, and then the effect of electron irradiation on the crystallization, electrical resistivity and optical properties of the films was considered with X-ray diffraction, UV-visible spectrometer, Atomic force microscope and Hall measurement system. All the films were deposited at a fixed sputtering power, Ar gas flow rate, and distance between target and substrate, while the post-deposition electron irradiation energy was varied from 300 to 900 eV. The electron irradiated films exhibited a flatter surface than the as deposited films that were not electron irradiated, and the XRD patterns also revealed that the electron irradiated films had larger grain sizes than that of as deposited films. The films electron irradiated at 900 eV also showed a higher visible transmittance of 79.8% and a lower sheet resistance of 56.0 omega/. Post-deposition films electron irradiated at 900 eV showed a higher figure of merit of 1.86x10-3 omega-1 than that of the as deposited film of 1.29x10-3 omega-1. The optical band gap was also enhanced by electron irradiation. The films electron irradiated at 900 eV showed a higher optical band gap of 4.07 eV.

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