Single-Crystal Growth and Fermi Surface Properties of LaPd2Si2: Comparison with Pressure-Induced Heavy-Fermion Superconductor CePd2Si2

We report the single-crystal growth and comparative Fermi surface studies of LaPd2Si2 via de Haas-van Alphen (dHvA) experiments and theoretical band structure calculations, as a non-magnetic reference for pressure-induced heavy-fermion superconductor CePd2Si2. We grew the single crystals of LaPd2Si2 using the Czochralski and floating zone method. High-quality single crystals of LaPd2Si2 were obtained using the floating zone method, and clear dHvA signals were detected. We detected main Fermi surfaces in angular dependence measurements of the dHvA frequencies, revealing a good agreement with the result of band structure calculations based on the localized-4f electron model. From our dHvA measurements using the high-quality single crystal, as well as our theoretical band structure calculations, we conclude that the 4f electrons in CePd2Si2 are itinerant rather than localized in an intermediate antiferromagnetic state.

Automated summary

This study investigates the single-crystal growth and Fermi surface of LaPd2Si2 as a non-magnetic reference for the pressure-induced heavy-fermion superconductor CePd2Si2. High-quality single crystals of LaPd2Si2 were successfully grown using the floating zone method and clear dHvA signals were detected. The experimental results show good agreement with the theoretical band structure calculations based on the localized-4f electron model, indicating that the 4f electrons in CePd2Si2 are itinerant.