期刊
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
卷 169, 期 11, 页码 -出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1945-7111/ac9f80
关键词
-
资金
- Ministry of Science and Technology of Taiwan [MOST 111-2221-E-260-010]
In this study, the effects of UVTA on the electrical properties of In-free amorphous ZnSnO thin films were investigated. It was found that UVTA greatly improved the quality of the films and enhanced their gas sensing characteristics. The strategy of UV-assisted thermal annealing allows for the fabrication of gas sensors at low temperature and is applicable to flexible electronics.
Ultraviolet-assisted thermal annealing (UVTA) has been widely used to fabricate solution-processed amorphous oxide semiconductor (AOS)-based transistors and photodetectors. However, this method has not been used for AOS-based gas sensors, even though AOS is a good gas sensing material. This study determines the effect of UVTA on the electrical properties of In-free amorphous ZnSnO (ZTO) thin films and their ozone (O-3) gas sensing characteristics. UV light from a Mercury lamp has sufficient energy to decompose the organic- and hydrogen-based impurities completely, which promotes the formation of metal oxide networks, so the quality of ZTO films is greatly increased by increasing treatment time. A relatively high gas response of 1.42 with a fast response/recovery time (124/78 s) is achieved. This strategy allows the fabrication of ZTO gas sensors at low temperature (150 degrees C) and is applicable to flexible electronics.
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