4.6 Article

The Critical Stack Pressure to Alter Void Generation at Li/Solid-Electrolyte Interfaces during Stripping

期刊

出版社

ELECTROCHEMICAL SOC INC
DOI: 10.1149/1945-7111/ac91aa

关键词

Interface; Stack pressure; Critical current density (CCD); Multiscale simulations

资金

  1. Assistant Secretary for Energy Efficiency and Renewable Energy, Vehicle Technologies Office of the U.S. Department of Energy under the Battery Material Research (BMR) Program [DEEE0008863]

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This study investigates the effect of interface interaction and stack pressure on the critical current density (CCD) during lithium stripping using lithiophilic and lithiophobic interfaces. The results show that lithiophobic interfaces require higher stack pressure to achieve the same CCD, and this stack pressure needs to be high enough to alter the Li forward-and-backward hopping barriers at the interface. The findings highlight the importance of considering chemical-mechanical effects during lithium stripping morphology evolution and can be used for designing interlayer coating materials for maintaining a flat lithium surface during cycling.
The lithium stripping process generates vacancies, which may accumulate as voids and lead to uneven current distribution and dendrite growth in the following plating cycles. A stack pressure is typically required during stripping, but how to optimize the stack pressure is not clear. In this work, extremely lithiophilic Li/Li2O and lithiophobic Li/LiF interfaces were used to reveal the combining effect of interface interaction and stack pressure induced lithium creep on the stripping critical current density (CCD). A multiscale simulation scheme with Density Functional Theory (DFT), kinetic Monte Carlo (KMC) simulations, and an analytical model was developed. The analytical model predicted lithiophobic interfaces require a higher stack pressure than lithiophilic interfaces to reach the same CCD. The KMC simulations also showed higher stack pressure is needed at lithiophobic interfaces to accelerate Li vacancy diffusion into the bulk and maintain a flat surface. This stack pressure needs to be high enough to alter the Li forward-and-backward hopping barriers at the interface. This multiscale simulation scheme illustrates the importance to include the chemical-mechanical effects during Li stripping morphology evolution. It can be used to design ideal interlayer coating materials to maintain a flat Li surface during cycling.

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