Solution Deposition for Chalcogenide Perovskites: A Low- Temperature Route to BaMS3 Materials (M = Ti, Zr, Hf)

Chalcogenide perovskites, including BaZrS3, have been suggested as highly stable alternatives to halide perovskites. However, the synthesis of chalcogenide perovskites has proven to be a significant challenge, often relying on excessively high temperatures and methods that are incompatible with device integration. In this study, we developed a solution-based approach to the deposition of BaZrS3. This method utilizes a combination of a soluble barium thiolate and nanoparticulate zirconium hydride. Following solution-based deposition of the precursors and subsequent sulfurization, BaZrS3 can be obtained at temperatures as low as 500 degrees C. Furthermore, this method was extended to other chalcogenide perovskite (BaHfS3) and perovskite-related (BaTiS3) materials.

Automated summary

A solution-based method was developed to deposit chalcogenide perovskites, such as BaZrS3, at low temperatures. This method utilizes a combination of soluble barium thiolate and nanoparticulate zirconium hydride.