期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 55, 期 49, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac962f
关键词
sapphire; substrates; orientation; Sn; doped; gallium oxide
资金
- Russian Science Foundation [19-19-00409]
- Department of the Defense (DOD)
- Defense Threat Reduction Agency (DTRA) [HDTRA1-20-2-0002]
- NSF [DMR 1856662]
The electrical and structural properties of alpha-Ga2O3 grown by HVPE are significantly influenced by the sapphire substrate orientation, and the use of alpha-Cr2O3 buffers has three major effects on it.
Heavily Sn-doped films of alpha-Ga2O3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and on (10-12) r-sapphire substrates with and without alpha-Cr2O3 thin buffers prepared by magnetron sputtering and annealing in air at 500 degrees C for 3 h. For both substrate orientations, the use of alpha-Cr2O3 buffers led to three major effects. The first was a substantial decrease of the half-width of the symmetric and asymmetric x-ray reflections. The second was an order of magnitude decrease of the net donor concentration produced by flowing the same amounts of Sn into the reactor. Third, there was a reduction in the concentration of the major electron trap in the films near E (c) - 1 eV by more than a factor of two. These results show the major influence of sapphire substrate orientation on the electrical and structural properties of alpha-Ga2O3 grown by HVPE.
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