期刊
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 13, 期 40, 页码 9501-9509出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.2c01973
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资金
- Alexsander von Humboldt Foundation
- National Natural Science Foundation of China [11704291, 51875417]
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process [Y202101]
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and NanoBionics, Chinese Academy of Sciences [21YZ03]
- Natural Science Foundation of Jiangsu Province [BK.20210130]
- Innovative and Entrepreneurial Doctor in Jiangsu Province [JSSCBS20211428]
- High-Performance Computing Center of Wuhan University of Science and Technology
Black arsenic phosphorus is an important material for future photonic devices. The band gap of the material switches from direct to indirect when the x value is 0.75. The absorption characteristics of the material also vary with different x values, which is significant for the application of photodetectors.
Black arsenic phosphorus (b-AsxP1-x) is expected to be one of the primary materials for future photonic devices. However, the x-factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, AsxP1-x switches from a direct band gap semiconductor to an indirect band gap one at x = 0.75. AsxP1-x at x <= 0.25 is capable of broadband absorption, while b-AsxP1-x at x >= 0.75 can only absorb at specific wavelengths in the perspective of the electron energy transition. Additionally, the optoelectronic response of the integral field-effect transistor configurations constructed with b-AsxP1-x is investigated systematically as a photodetector device. The photonic response characteristics show high polarization sensitivity at x >= 0.75, but a typical circuit system signal at x <= 0.25. These results suggest that b-AsxP1-x with high concentration differences is a perfect candidate for photonic material.
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