Bimetallic Alloys b-AsXP1-X at High Concentration Differences: Ideal for Photonic Devices

Black arsenic phosphorus (b-AsxP1-x) is expected to be one of the primary materials for future photonic devices. However, the x-factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, AsxP1-x switches from a direct band gap semiconductor to an indirect band gap one at x = 0.75. AsxP1-x at x <= 0.25 is capable of broadband absorption, while b-AsxP1-x at x >= 0.75 can only absorb at specific wavelengths in the perspective of the electron energy transition. Additionally, the optoelectronic response of the integral field-effect transistor configurations constructed with b-AsxP1-x is investigated systematically as a photodetector device. The photonic response characteristics show high polarization sensitivity at x >= 0.75, but a typical circuit system signal at x <= 0.25. These results suggest that b-AsxP1-x with high concentration differences is a perfect candidate for photonic material.

Automated summary

Black arsenic phosphorus is an important material for future photonic devices. The band gap of the material switches from direct to indirect when the x value is 0.75. The absorption characteristics of the material also vary with different x values, which is significant for the application of photodetectors.