Origin of the High Selectivity of the Pt-Rh Thin-Film H2 Gas Sensor Studied by Operando Ambient-Pressure X-ray Photoelectron Spectroscopy at Working Conditions

The Pt-Rh thin-film sensors exhibit excellent sensitivity and selectivity for H-2 gas detection. Here, we studied the mechanism of highly selective detection of H-2 by the Pt-Rh thin-film sensors with ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) measurements at working conditions, which were paralleled with electric resistivity measurements. The elemental composition and chemical state of surface Pt and Rh drastically change depending on the background gas environments, which directly link to the sensor response. It is revealed that surface segregated Pt atoms accelerate dissociative adsorption of H-2, resulting in a reduction of the sensor surface and then a decrease of electric resistivity of the film, whereas a thin oxidized Rh layer blocks dissociation of the other reducing agent, that is, NH3. This is supported from the adsorption energetics obtained by the density functional theory (DFT) calculations.

Automated summary

The mechanism of highly selective detection of H-2 by Pt-Rh thin-film sensors was studied using AP-XPS measurements and electric resistivity measurements. It was found that surface segregated Pt atoms accelerated the dissociation of H-2, leading to a reduction of the sensor surface and a decrease in the film's electric resistivity; on the other hand, a thin oxidized Rh layer blocked the dissociation of the other reducing agent, NH3.