期刊
ADVANCED FUNCTIONAL MATERIALS
卷 25, 期 22, 页码 3321-3329出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201500837
关键词
electron mobility; organic field effect transistors; perylene diimide; thionation
类别
资金
- NSERC
- DuPont
- A. P. Sloan Foundation
- Connaught Global Challenge Award
Perylene diimides (PDIs) are one of the most widely studied n-type materials, showing great promise as electron acceptors in organic photovoltaic devices and as electron transport materials in n-channel organic field effect transistors. Amongst the well-established chemical modification strategies for increasing the electron mobility of PDI, substitution of the imide oxygen atoms with sulfur, known as thionation, has remained largely unexplored. In this work, it is demonstrated that thionation is a highly effective means of enhancing the electron mobility of a bis-N-alkylated PDI derivative. Successive oxygen-sulfur substitution increases the electron mobility such that the fully thionated derivative (S4) has an average mobility of 0.16 cm(2) V-1 s(-1). This is two orders of magnitude larger than the nonthionated parent compound (P), and is achieved by solution deposition and without thermal or solvent vapor annealing. A combination of atomic force microscopy and 2D wide angle X-ray scattering experiments, together with theoretical modeling of charge transport efficiency, is used to explain the strong positive correlation observed between electron mobility and degree of thionation. This work establishes thionation as a highly effective means of enhancing the electron mobility of PDI, and provides motivation for the development of thionated PDI derivatives for organic electronics applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据