Analysing the dielectric properties of ZnO doped PVDF/PMMA blend composite

Composite films of polyvinylidene fluoride (PVDF)/polymethyl methacrylate (PMMA) blend filled with zinc oxide in 0.5%, 1%, 2%, and 4% wt concentration were prepared by solution-casting technique. The values of impedance parameters, viz. capacitance (C) and dissipation factor (D), were measured using impedance analyser (Wanyne Kerr 6500B) and from this data the effect of doping levels on the dielectric properties, viz. complex dielectric function, electrical conductivity and electric modulus of these films were investigated in the frequency range 10(2)-10(6) Hz at ambient temperature. It was observed that the dielectric constant (epsilon), AC conductivity (sigma(AC)) and loss tangent (tan delta) increase significantly with increase in ZnO content. A direct correlation between the dielectric parameter and the mean relaxation time of polymer chain segmental dynamics has been observed and it can be inferred that varying amount of metal oxide filler can be used to tailor the dielectric properties of these materials for their use in microelectronics.

Automated summary

The effect of different concentrations of zinc oxide on the dielectric properties of composite films was studied. It was found that increasing the zinc oxide content significantly increased the dielectric constant, AC conductivity, and loss tangent. A direct correlation between the dielectric parameter and the mean relaxation time of polymer chain segmental dynamics was observed, suggesting that the dielectric properties of these materials can be tailored by varying the amount of metal oxide filler for use in microelectronics.