4.6 Article

Structural, optical and dielectric properties of aluminum-substituted SrAl2xFe12-2xO19x = (0.0,0.2,0.4,0.6,0.8,1.0) M-type hexagonal ferrites

期刊

出版社

SPRINGER
DOI: 10.1007/s10854-022-08943-x

关键词

-

资金

  1. Research Center for Advanced Materials Science (RCAMS) at King Khalid University Abha, Saudi Arabia [KKU/RCAMS-G015/21]

向作者/读者索取更多资源

Aluminum-substituted M-type hexaferrites were successfully prepared using sol gel auto combustion route, with high purity phase confirmed by XRD analysis. Optical and dielectric properties were studied, indicating potential applications in high frequency devices.
Aluminum-substituted M-type hexaferrites with nominal composition SrAl2xFe12-2xO19 with x = (0.0,0.2,0.4,0.6,0.8,1.0) were successfully prepared by sol gel auto combustion route. The confirmation of M-type hexagonal ferrites with high purity phase was done by the XRD analysis. Lattice parameters a and c, c/a ratio and cell volume have been calculated. Lattice parameter 'a' varies from (5.86-5.88) angstrom, 'c' varies from (22.87 to 23.08) angstrom, Cell volume lies in the range of (687.10-688.90) angstrom(3) and crystallite size varies from 39 to 61 nm. Optical properties of materials were determined by optical bandgap. The value of bandgap E-g was decreased linearly with the increase of Aluminum substitution and it approaches to maximum within energy range of 1.74 to 2.80 eV. Permittivity, permit loss, tan loss, ac conductivity, real and imaginary parts of electric modulus was also discussed. Maximum value of dielectric constant (15.5) was obtained for SrAl2xFe12-2xO19 at x = 1.0 composition at 2.5 GHz frequency. Similarly Maximum Q-value was obtained for this composition. On the basis of space charge polarization and hopping of electrons between Fe3+ and Fe2+, the observed change in dielectric parameters have been explained. The Maxwell Wagner and Koop's models have been used to explain the change in ac conductivity as a function of frequency. Based on these properties, the prepared materials are highly recommended in high frequency devices such as modulator, sensing, switching, security and energy storage devices.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据