期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 33, 期 27, 页码 21519-21530出版社
SPRINGER
DOI: 10.1007/s10854-022-08943-x
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- Research Center for Advanced Materials Science (RCAMS) at King Khalid University Abha, Saudi Arabia [KKU/RCAMS-G015/21]
Aluminum-substituted M-type hexaferrites were successfully prepared using sol gel auto combustion route, with high purity phase confirmed by XRD analysis. Optical and dielectric properties were studied, indicating potential applications in high frequency devices.
Aluminum-substituted M-type hexaferrites with nominal composition SrAl2xFe12-2xO19 with x = (0.0,0.2,0.4,0.6,0.8,1.0) were successfully prepared by sol gel auto combustion route. The confirmation of M-type hexagonal ferrites with high purity phase was done by the XRD analysis. Lattice parameters a and c, c/a ratio and cell volume have been calculated. Lattice parameter 'a' varies from (5.86-5.88) angstrom, 'c' varies from (22.87 to 23.08) angstrom, Cell volume lies in the range of (687.10-688.90) angstrom(3) and crystallite size varies from 39 to 61 nm. Optical properties of materials were determined by optical bandgap. The value of bandgap E-g was decreased linearly with the increase of Aluminum substitution and it approaches to maximum within energy range of 1.74 to 2.80 eV. Permittivity, permit loss, tan loss, ac conductivity, real and imaginary parts of electric modulus was also discussed. Maximum value of dielectric constant (15.5) was obtained for SrAl2xFe12-2xO19 at x = 1.0 composition at 2.5 GHz frequency. Similarly Maximum Q-value was obtained for this composition. On the basis of space charge polarization and hopping of electrons between Fe3+ and Fe2+, the observed change in dielectric parameters have been explained. The Maxwell Wagner and Koop's models have been used to explain the change in ac conductivity as a function of frequency. Based on these properties, the prepared materials are highly recommended in high frequency devices such as modulator, sensing, switching, security and energy storage devices.
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