期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 33, 期 35, 页码 26414-26423出版社
SPRINGER
DOI: 10.1007/s10854-022-09321-3
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资金
- Scientific Research Foundation of Education Department of Anhui Province of China [KJ2019A0779]
In this study, epitaxial La0.7Sr0.3MnO3 thin films were successfully prepared by using an ultraviolet laser-assisted annealing technique. The films exhibited a specific epitaxial relationship and showed enhanced properties with increasing laser energy density.
Epitaxial La0.7Sr0.3MnO3 thin films on SrTiO3 (001) single-crystal substrates were successfully prepared by a chemical solution deposition usage of an ultraviolet laser (KrF, lambda = 248 nm)-assisted annealing at 400 degrees C. It was observed that the prepared thin films were amorphous when the laser energy density was below 50 mJ/cm(2), and epitaxial La0.7Sr0.3MnO3 thin films were successfully obtained when the laser energy density was higher than 60 mJ/cm(2). The epitaxial relationship is of La0.7Sr0.3MnO3(001)||SrTiO3(001) and La0.7Sr0.3MnO3[110]||SrTiO3[110]. With the enhancement of laser energy density, the temperatures of metal-insulator transition and magnetic transition are increased, and the resistivity is decreased. The results will provide a facile method to deposit epitaxial La0.7Sr0.3MnO3 thin films at low temperatures.
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