Analysis of voltage mid frequency-dependent series resistance and interface states of Al/ZnCo2O4: Gelatin/n-Si diode

In this work, which aims to investigate the capacitance and conductance properties of ZnCo2O4-doped Gelatin, 5% ZnCo2O4-doped Gelatin film was grown on n-type silicon wafer by sol-gel spin coating with the aim of fabricating Al/ZnCo2O4:Gelatin/n-Si Schottky diode. This investigation also explores the series resistance (R-S) and interface state (N-ss) characteristics of a diode produced with ZnCo2O4:Gelatin interface layer. Electrical measurements were taken in the voltage range of - 5 V and + 2 V and the frequency range of 30 kHz and 1 MHz. The electrical properties of the diodes were characterized from voltage and frequency-dependent measurements. Capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics yielded higher values showing the significance of the interface states. At lower frequencies, the rise in the capacitance value is signed to the interface state density. The values of N-SS for 30 kHz and 1 MHz frequency are 10.5 x 10(11) and 4.19 x 10 11 eV(-1) cm(-2). It is recommended to use the produced diode as an electronic device.

Automated summary

This study investigates the capacitance and conductance properties of ZnCo2O4-doped Gelatin, showing the significance of interface states. Capacitance and conductance characteristics reveal a correlation between the increase in capacitance values at lower frequencies and interface state density.