4.7 Article

Design principle of S-scheme heterojunction photocatalyst

期刊

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
卷 124, 期 -, 页码 171-173

出版社

JOURNAL MATER SCI TECHNOL
DOI: 10.1016/j.jmst.2022.02.016

关键词

S-scheme heterojunction; p-type semiconductor; n-type semiconductor; Curved Fermi level

资金

  1. Deanship of Scientific Research (DSR) at King Abdulaziz University, Jeddah [RG-72-130-42]

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A new opinion on general design standards for S-scheme heterojunction photocatalyst was recently presented, and four types of S-scheme heterojunctions were analyzed. Specifically, the critical understanding of the curved Fermi level at the interface of S-scheme heterojunction contributes to strengthening and promoting the basic theory of photocatalysis.
Recently, a new opinion was put forward on general design standards for S-scheme heterojunction photocatalyst. Four types of S-scheme heterojunctions were analyzed. Specifically, the critical understanding on the curved Fermi level at the interface of S-scheme heterojunction is helpful to strengthen and promote the basic theory of photocatalysis. (c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.

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