期刊
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
卷 124, 期 -, 页码 171-173出版社
JOURNAL MATER SCI TECHNOL
DOI: 10.1016/j.jmst.2022.02.016
关键词
S-scheme heterojunction; p-type semiconductor; n-type semiconductor; Curved Fermi level
资金
- Deanship of Scientific Research (DSR) at King Abdulaziz University, Jeddah [RG-72-130-42]
A new opinion on general design standards for S-scheme heterojunction photocatalyst was recently presented, and four types of S-scheme heterojunctions were analyzed. Specifically, the critical understanding of the curved Fermi level at the interface of S-scheme heterojunction contributes to strengthening and promoting the basic theory of photocatalysis.
Recently, a new opinion was put forward on general design standards for S-scheme heterojunction photocatalyst. Four types of S-scheme heterojunctions were analyzed. Specifically, the critical understanding on the curved Fermi level at the interface of S-scheme heterojunction is helpful to strengthen and promote the basic theory of photocatalysis. (c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
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