4.3 Article

100 ps time resolution with thin silicon pixel detectors and a SiGe HBT amplifier

期刊

JOURNAL OF INSTRUMENTATION
卷 11, 期 -, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/1748-0221/11/03/P03011

关键词

Analogue electronic circuits; Si microstrip and pad detectors; Timing detectors; Frontend electronics for detector readout

向作者/读者索取更多资源

A 100 mu m thick silicon detector with 1 mm(2) pad readout optimized for sub-nanosecond time resolution has been developed and tested. Coupled to a purposely developed amplifier based on SiGe HBT technology, this detector was characterized at the H8 beam line at the CERN SPS. An excellent time resolution of (106 +/- 1) ps for silicon detectors was measured with minimum ionizing particles.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据